【英文标准名称】:Electricalcateringequipment.Generalsafetyrequirements.
【原文标准名称】:食品供应用电气设备.一般安全要求
【标准号】:NFC79-500-1980
【标准状态】:现行
【国别】:法国
【发布日期】:1980-10-01
【实施或试行日期】:1980-10-25
【发布单位】:法国标准化协会(AFNOR)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:
【英文主题词】:
【摘要】:
【中国标准分类号】:Y69
【国际标准分类号】:97_040_99
【页数】:1P;A4
【正文语种】:其他


【英文标准名称】:TestMethodforQuantifyingTungstenSilicideSemiconductorProcessFilmsforCompositionandThickness
【原文标准名称】:定量分析硅化钨半导体加工膜组分和厚度的标准试验方法
【标准号】:ASTMF1894-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.17
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:定量分析;硅化钨分析;背散射分析;金属膜;组分
【英文主题词】:analysisoftungstensilicide;backscatteringanalysis;composition;metallizationfilms;quantitativeanalysis;RBS;Wsix
【摘要】:ThistestmethodcanbeusedtoensureabsolutereproducibilityofWSixfilmdepositionsystemsoverthecourseofmanymonths.Thetimespanofmeasurementsisessentiallythelifeofmanyprocessdepositionsystems.ThistestmethodcanbeusedtoqualifynewWSixdepositionsystemstoensureduplicabilityofexistingsystems.Thistestmethodisessentialforthecoordinationofglobalsemiconductorfabricationoperationsusingdifferentanalyticalservices.Thistestmethodallowssamplesfromvariousdepositionsystemstobeanalyzedatdifferentsitesandtimes.Thistestmethodisthechosencalibrationtechniqueforavarietyofanalyticaltechniques,including,butnotlimitedto:5.3.1Electronspectroscopyforchemicalanalysis(ESCAorXPS),5.3.2Augerelectronspectroscopy(AES),5.3.3Fouriertransforminfraredredspectroscopy(FTIR),5.3.4Secondaryionmassspectrometry(SIMS),and5.3.5Electrondispersivespectrometry(EDS)andparticleinducedx-rayemission(PIXE).1.1Thistestmethodcoversthequantitativedeterminationoftungstenandsiliconconcentrationsintungsten/silicon(WSIx),semiconductorprocessfilmsusingRutherfordBackscatteringSpectrometry(RBS).(1)ThistestmethodalsocoversthedetectionandquantificationofimpuritiesinthemassrangefromphosphorusA(31atomicmassunits(amu)toantimony(122amu).1.2Thistestmethodcanbeusedfortungstensilicidefilmspreparedbyanydepositionorannealingprocesses,orboth.Thefilmmustbeauniformfilmwithanarealcoveragegreaterthantheincidentionbeam(~2.5mm).1.3Thistestmethodaccuratelymeasureshefollowingfilmproperties:silicon/tungstenratioandvariationswithdepth,tungstendepthprofilethroughoutfilm,WSIx,filmthickness,argonconcentrations(ifpresent),presenceofoxideonsurfaceofWSIxfilms,andtransitionmetalimpuritiestodetectionlimitsof1x1014atoms/cm2.1.4Thistestmethodcandetectabsolutedifferencesinsiliconandtungstenconcentrationsof+/-3and+/-1atomicpercent,respectively,measuredfromdifferentsamplesinseparateanalyses.relativevariationsinthetungstenconcentrationindepthcanbedetectedto+/-0.2atomicpercentwithadepthresolutionof+/-70A.1.5ThistestmethodsupportsandassistsinqualifyingWSIxfilmsbyelectricalresistivitytechniques.1.6ThistestmethodcanbeperformedforWSIxfilmsdepositedonconductingorinsulatingsubstrates.1.7ThistestmethodisusefulforWSIxfilmsbetween20and400mmwithanarealcoverageofgreaterthan1by1mm.1.8Thistestmethodisnon-destructivetothefilmtotheextentofsputtering.1.9Astatisticalprocesscontrol(SPC)ofWSIxfilmshasbeenmonitoredsince1993withreproducibilityto+/-4%.1.10ThistestmethodproducesaccuratefilmthicknessesbymodelingthefilmdensityoftheWSIxfilmasWSI2(hexagonal)plusexcesselementalSI2.Themeasuredfilmthicknessisalowerlimittotheactualfilmthicknesswithanaccuracylessthan10%comparedtoSEMcross-sectionmeasurements(see13.4)1.11Thistestmethodcanbeusedtoanalyzefilmsonwholewafersupto300mmwithoutbreakingthewafers.Thesitesthatcanbeanalyzedmayberestrictedtoconcentricringsnearthewaferedgesfor200-mmand300-mmwafers,dependingonsystemcapabilities.1.12Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.ThereaderisreferencedtoSection8ofthistestmethod......
【中国标准分类号】:H82
【国际标准分类号】:29_045
【页数】:7P.;A4
【正文语种】: